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A model for pressurized hydrogen induced thin film blisters

机译:加压氢致薄膜水泡的模型

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摘要

We introduce a model for hydrogen induced blister formation in nanometer thick thin films. The model assumes that molecular hydrogen gets trapped under a circular blister cap causing it to deflect elastically outward until a stable blister is formed. In the first part, the energy balance required for a stable blister is calculated. From this model, the adhesion energy of the blister cap, the internal pressure, and the critical H-dose for blister formation can be calculated. In the second part, the flux balance required for a blister to grow to a stable size is calculated. The model is applied to blisters formed in a Mo/Si multilayer after being exposed to hydrogen ions. From the model, the adhesion energy of the Mo/Si blister cap was calculated to be around 1.05 J/m2 with internal pressures in the range of 175–280 MPa. Based on the model, a minimum ion dose for the onset of blister formation was calculated to be d = 4.2 × 1018 ions/cm2. From the flux balance equations, the diffusion constant for the Mo/Si blister cap was estimated to be D H 2 =(10±1)×10 −18  cm 2 /s DH2=(10±1)×10−18 cm2/s .
机译:我们介绍了一种在纳米厚的薄膜中氢诱导水疱形成的模型。该模型假设分子氢被捕获在圆形泡罩盖下,从而使其向外弹性偏转,直到形成稳定的泡罩。在第一部分中,计算出稳定泡罩所需的能量平衡。根据该模型,可以计算出泡罩盖的粘附能,内部压力以及形成泡罩的临界H剂量。在第二部分中,计算了泡囊生长到稳定尺寸所需的通量平衡。该模型适用于暴露于氢离子后在Mo / Si多层膜中形成的气泡。根据该模型,计算得出的Mo / Si泡罩盖的附着力约为1.05 J / m2,内部压力为175-280 MPa。基于该模型,计算出水泡形成开始的最小离子剂量为d = 4.2×1018离子/ cm2。根据通量平衡方程,Mo / Si泡罩的扩散常数估计为DH 2 =(10±1)×10 -18 cm 2 / s DH2 =(10±1)×10-18 cm2 / s 。

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